| 摘要 |
A metal wiring forming method of semiconductor device is provided to reclaim the contact hole without the defect like the void by preventing the loss of the interlayer insulating layer. A lower metal wiring(105) is formed on a semiconductor substrate(100). The lower metal wiring is formed of a metal layer(102) and a hard mask layer(104). An interlayer insulating layer covering the lower metal wiring is formed on the semiconductor substrate in which the lower metal wiring is formed. The first barrier layer covering the contact hole is formed on the second inter metal dielectric pattern(108a). The first barrier pattern(110a) exposing the lower metal wiring is formed on the inner side of the second inter metal dielectric pattern.
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