THE METHOD FOR REDUCING A LEAKAGE CURRENT OF THE NITRIDE COMPOUND SEMICONDUCTOR DEVICE

摘要

A method for reducing the leakage current of the nitride semiconductor device is provided to remarkably reduce the gate leakage current of transistor by suppressing the leakage current which flows the between electrode of the devices using the metal electrode formed in the surface of substrate. The multi-layered metal is formed on a substrate(S), and a source Ohmic metal(130) and a drain Ohmic metal(140) are formed by annealing. A metal gate(150) is formed by the lithography and the metal deposition method. The surface of substrate is plasma-processed with N2O in the vacuum chamber. The substrate is heated at the temperature within 700‹C and is processed with plasma. The surface of substrate is plasma-processed with the gas containing oxygen. The region exposed to the plasma is surface-treated.