THIN FILM TRANSISTOR, DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A thin film transistor, a display device including the thin film transistor and a manufacturing method are provided to improve the electrical properties uniformity of the thin film polycrystalline transistor and reduce leakage current. A second circuit gate electrode(132a) and a second gate electrode(132b) are formed at the upper part of a first circuit gate electrode and a first pixel gate electrode. The first circuit semiconductor comprises the polycrystalline semiconductor and is formed in the first circuit gate electrode upper part. The pixel semiconductor comprises the amorphous semiconductor and is formed in the second pixel gate electrode upper part. The circuit source electrode and circuit drain electrode are formed.