| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same, ensuring favorable barrier characteristics even with a thin barrier film. <P>SOLUTION: The semiconductor device includes a first conductor 32 disposed on a semiconductor substrate 10, an oxygen-containing insulation film 48 disposed on the semiconductor substrate and the first conductor, the semiconductor film having a contact hole 52 which extends to the first conductor and a trench 54 which is connected to an upper portion of the contact hole, a zirconium oxide film 62 disposed on a side surface of the contact hole and a side surface and a bottom surface of the trench, a zirconium film 64 disposed on the zirconium oxide film inside the contact hole and inside the trench, and a second conductor 70 composed of Cu embedded into the contact hole and into the trench. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
