INSULATION GATE TYPE FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide an insulation gate type field-effect transistor, capable of suppressing increase in the manufacturing cost and improving the breakdown voltage, without increasing the thickness of the gate insulating film, and to provide a manufacturing method for the transistor. SOLUTION: The MOSFET 1 includes an n+SiC substrate 10, an n-SiC layer 20, a pair of p-wells 21, a gate oxide film 30, a gate electrode 40 and a plurality of p-conductivity-type relief regions 23, arranged separated from each other in the n-SiC layer 20. The plurality of relief regions 23 are arranged at a distance which is not larger than one-third of the distance between the pair of p-wells 21, for the arrangement in a direction along a second main surface 20B between the second main surface 20B of the n-SiC layer 20, sandwiched by the pair of p-wells 21 and the n+SiC substrate 10 opposing the second main surface 20B. COPYRIGHT: (C)2009,JPO&INPIT