SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device is provided with a first interlayer insulating film (101), and a plurality of first wirings (105) formed on the first interlayer insulating film (101). A gap section (112) is selectively formed between the adjacent wirings of the first wirings (105) on the first interlayer insulating film (101), and a gap insulating film (111) is formed between the wirings, above the gap section (112). The width of a lower end section and that of the upper end section of the gap section (112) are substantially the same as a distance between the gap section (112) and the adjacent wiring, and the position of the lower end section of the gap section (112) is lower than the position of the lower end section of the first wiring (105) adjacent to the gap section (112).