| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a homogeneous semiconductor substrate which reduces defective bonding. <P>SOLUTION: Such a semiconductor substrate can be formed by the steps of: disposing a first substrate in a substrate arrangement region of a substrate bonding chamber which includes a substrate supporting base where a plurality of openings is provided in the substrate arrangement region, substrate supporting mechanisms provided in each of the plurality of openings, raising and lowering mechanisms which raise and lower the substrate supporting mechanisms, and a position adjusting mechanism which adjusts the positions of the substrate supporting mechanisms and the raising and lowering mechanisms for the substrate supporting base; disposing a second substrate over the first substrate so as not to be in contact with the first substrate; and bonding the first substrate to the second substrate by raising the substrate supporting mechanisms to bring into contact with the first substrate and the second substrate. After bonding, before conveying the first substrate and the second substrate, heat treatment takes place at≥150°C and≤450°C. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
