| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor substrate which can eliminate a barrier metal from between wiring metals, such as, source electrode, drain electrode, and to provide a display device. SOLUTION: The thin film transistor substrate includes a semiconductor layer 1, a source electrode 2, a drain electrode 3, and a transparent electrode 4. The source electrode 2 and drain electrode 3 are made of an Al alloy film which contains Si and/or Ge:0.1-1.5 atom%, Ni and/or Co:0.1-3.0 atom%, and La and/or Nd:0.1-0.5 atom% and is directly connected to the semiconductor layer 1. COPYRIGHT: (C)2009,JPO&INPIT
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