| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which corruption of data in a latch circuit during writing and occurrence of erroneous writing can be prevented. <P>SOLUTION: The device is provided with a write circuit including a memory cell array, a plurality of bit lines, and a latch circuit configured by two inverters having a positive side power source terminal supplied with a first voltage and a negative side power source terminal supplied with a second voltage is supplied, and a write state machine controlling the first and the second voltage, the first voltage is changed to a second value that is lower than a first value when data is written in the memory cell, the second voltage is changed to a third value that is lower than the second value when data is written in the memory cell, and the write state machine controls the first and the second voltage so that the second voltage is lowered to an intermediate value of the second value and the third value, and the first voltage is lowered from the first value to the second value while the intermediate value is maintained. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
