发明名称 GAS SUPPLY UNIT AND CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a gas supply unit and a chemical vapor deposition apparatus with which by-products resulting from a chemical vapor deposition process is immediately exhausted, so that a high quality thin film is deposited on the surface of a deposition object, a cleaning cycle for the inside of a chamber is extended, for greater productivity. SOLUTION: The gas supply unit for supplying a reactive gas for a chemical vapor deposition can include a hot wire part configured to pyrolyze the reactive gas, an ejection part configured to eject the reactive gas towards the hot wire part, and a suction part disposed adjacent to the hot wire part and configured to suck in and exhaust a by-product of the reactive gas. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009191355(A) 申请公布日期 2009.08.27
申请号 JP20080185301 申请日期 2008.07.16
申请人 SAMSUNG ELECTRO-MECHANICS CO LTD 发明人 KANG HYUNG-DONG
分类号 C23C16/48;C23C16/455;C23C16/46;C23C16/54;C23C16/56;H01L21/205;H01L21/285 主分类号 C23C16/48
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