| 摘要 |
PROBLEM TO BE SOLVED: To provide a film-forming apparatus which improves the stability of an electric discharge of reactive direct-current sputtering and also inhibits defects originating in the formation of particles, and to provide a film-forming method. SOLUTION: The film-forming apparatus 1 of a reactive direct-current type has a direct-current power source 12, a metal target 10 connected to the direct-current power source 12, a dielectric framing member 14 which is arranged so as to surround the periphery of the metal target 10, an electrode part 9 arranged at a back side of the metal target 10, and magnet pairs 8 which generate such a magnetic field that a plasma-generated region 13 is formed over both of the metal target 10 and the dielectric framing member 14. COPYRIGHT: (C)2009,JPO&INPIT
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