| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device improved in power generation efficiency by increasing open-circuit voltage. <P>SOLUTION: A photoelectric conversion device 100 includes a photoelectric conversion layer 3 composed of a p-layer 41, an i-layer 42 and an n-layer 43 that are laminated, wherein an interface between the p-layer 41 and the i-layer 42 is formed with an interface layer, which contains nitrogen atoms at an atomic concentration of 1-30%. A method of manufacturing the photoelectric conversion device 100 includes a step of forming the photoelectric conversion layer 3 composed of the p-layer 41, i-layer 42 and n-layer 43 laminated on a substrate 1. Furthermore, the method includes a step of forming the interface layer on the interface between the p-layer 41 and i-layer 42, wherein the interface layer is a nitrogen-containing layer containing nitrogen atoms at an atomic concentration of 1-30%. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
