| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device which contributes to improvement in electric erase characteristics, and a method of manufacturing the same. SOLUTION: The nonvolatile memory device includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate; a diffusion layer electrode formed on the semiconductor substrate being adjacent to the gate electrode; a charge storage layer formed on the side surface of the gate electrode and holding injected electrons; and an LDD (Light Doped Drain) region formed in a lower portion of the diffusion layer electrode, and is characterized in that the charge storage layer is formed only on the side surface of the gate electrode and is not extended along the LDD region. COPYRIGHT: (C)2009,JPO&INPIT
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