| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a small refresh busy rate or low current consumption during holding of data, and advantageous in miniaturization. SOLUTION: The semiconductor memory device includes a memory cell including a source layer, a drain layer, an electrically floating body area which is provided between the source layer and the drain layer and accumulates charges so as to store logical data or discharges charges, and a gate electrode provided on the body area with a gate insulating film being interposed therebetween, a bit line connected to the drain layer of the memory cell, a word line which is connected to a gate electrode of the memory cell or function as a gate electrode, and a word line driver connected to the word line. The word line driver writes first logical data to the memory cell via the gate insulating film by electron valence band tunneling. COPYRIGHT: (C)2009,JPO&INPIT
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