| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor high electron mobility transistor and a manufacturing method thereof, achieving excellent contact resistance and current characteristics by preventing surface oxidation and carbon-contamination of an epitaxially grown layer and corrosion of an ohmic electrode. SOLUTION: The epitaxially grown layer 20 with an AIN buffer layer 22, a GaN channel layer 24 and an AlGaN carrier supply layer 26 laminated, is formed on a crystal growth substrate 10. Then, a first spacer layer 62 is formed on the epitaxially grown layer. A first opened part exposing the upper surface of the epitaxially grown layer is formed in the first spacer layer. The ohmic electrode 54 is formed in the first opened part. A second spacer layer 66 is formed on the first spacer layer and the ohmic electrode. A second opened part exposing the upper surface of the epitaxially grown layer is formed in the first and second spacer layers. A Schottky electrode 82 is formed in the second opened part. COPYRIGHT: (C)2009,JPO&INPIT
|
