| 摘要 |
<p>A silicon carbide semiconductor device (10), includes: 1) a silicon carbide substrate (1;2) a silicide electrode configured to be formed by depositing a contact parent material on the silicon carbide substrate (1) in such a manner as to cause a solid phase reaction, the silicide electrode (52) being a lower carbon content silicide electrode including: i) silicon, and ii) carbon smaller than the silicon in mol number; and 3) an upper conductor film (3) deposited to the silicide electrode (52).
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