| 摘要 |
A memory device (100) includes a memory array (102) and a sense amplifier (108). The memory array (102) includes a floating body cell (320, 420) configured to store a bit value. The sense amplifier (108) includes a bit output configured to provide an output voltage representative of the bit value and a reference source (302) configured to provide a reference voltage. The sense amplifier (108) further includes a current mirror (330, 430) configured to provide a current to the first floating body cell (320, 420) based on the reference voltage, and a differential amplifier circuit (332, 432) configured to determine the output voltage based on the reference voltage and a voltage across the floating body cell (320, 420) resulting from application of the current to the floating body cell (320, 420). ® KIPO & WIPO 2009
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