发明名称 WAVELENGTH CONTROL IN WAVELENGTH SELECTIVE, PHASE, AND GAIN REGIONS OF SEMICONDUCTOR LASER
摘要 Particular embodiments of the present invention relate generally to semiconductor lasers and laser scanning systems and, more particularly, to schemes for controlling semiconductor lasers. According to one embodiment of the present invention, a laser is configured for optical emission of encoded data. At least one parameter of the optical emission is a function of a drive current IGAIN injected into the gain section (16) of the semiconductor laser (10) and one or more additional drive currents IPHASE, IDBR. Mode selection in the semiconductor laser is altered by perturbing at least one of the additional drive currents IPHASE, IDBR witn a perturbation signal IPTRB to alter mode selection in the semiconductor laser (10) such that a plurality of different emission modes are selected in the semiconductor laser (10) over a target emission period. In this manner, patterned variations in the wavelength or intensity profile of the laser can be disrupted to disguise patterned flaws that would otherwise be readily noticeable in the output of the laser. ® KIPO & WIPO 2009
申请公布号 KR20090091131(A) 申请公布日期 2009.08.26
申请号 KR20097010051 申请日期 2007.10.11
申请人 CORNING INCORPORATED 发明人 BHATIA VIKRAM;GOLLIER JACQUES;HU MARTIN H.;LOEBER DAVID A.;RICKETTS DANIEL O.
分类号 G02B26/10;G03B21/00;H01S5/0625 主分类号 G02B26/10
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