| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a focus measurement method for correctly measuring the focus value and focus slippage, and to provide a method of manufacturing a semiconductor device and an exposure system using the same. <P>SOLUTION: A focus value is calculated by utilizing the fact that shrinkage of a resist pattern caused by irradiation with an electron beam varies depending on the focus value. When a focus value is calculated, a shrinkage of a resist pattern for measuring a focus formed by exposing a measurement object of focus value is measured. A focus value corresponding to the shrinkage is determined from the focus dependency of a shrinkage acquired previously. A focus slippage can be determined from the difference between that focus value and the best focus value. <P>COPYRIGHT: (C)2009,JPO&INPIT |
