| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a blue and violet light-emitting diode which has high luminous efficiency and a narrow spectrum line width by using a nitride semiconductor. <P>SOLUTION: The light-emitting diode comprises a lower clad layer, a light-emitting layer formed on the lower clad layer and made of the nitride semiconductor, an upper clad layer formed on the light-emitting layer, a lower ohmic electrode brought into contact with the lower clad layer, and an upper ohmic electrode brought into contact with the upper clad layer and having an optical window formed, wherein the lower clad layer, light-emitting layer and upper clad layer form a microcavity. <P>COPYRIGHT: (C)2009,JPO&INPIT |
