| 摘要 |
A substrate processing apparatus comprises a process chamber accommodating stacked substrates; a heating unit heating an inside of the process chamber to a predetermined temperature; a gas supply unit supplying predetermined process gas to the inside of the process chamber; and an exhaust unit exhausting the inside of the process chamber. The gas supply unit comprises: a gas supply nozzle having a straight pipe shape and installed in a stacked direction of the substrates; a metal pipe supporting the gas supply nozzle; and a manifold forming a lower part of the process chamber. The metal pipe comprises: a first part extending from an outside of the process chamber to the inside of the processes chamber through the manifold; and a second part connected to the first part and extending in the stacked direction of the substrates. The gas supply nozzle is fitted to and supported by the second part.
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