| 摘要 |
Truncated quadrangular pyramids 402 to be ABSs 15b, a quadrangular pyramid 401 to be a near field optical element 16, and metal films 303 and 304 formed on the quadrangular pyramid 401 are formed on the under surface of a substrate to be a near field optical head 15, the metal films 303 and 304 are electrically connected to an ohmmeter 405 through a conductive interconnect 18. A flat polishing material 404 arranged so as to face to the under surface of the substrate is used to polish the truncated quadrangular pyramid 402, the quadrangular pyramid 401, and the metal films 303 and 304 so that a top face 301e of the near field optical element 16 is in a predetermined size and the top face 301e and the ABSs 15b are in the same plane. At this time, the electrical resistance of the metal films 303 and 304 is changed by being polished, and the ohmmeter 405 detects the end point in the polishing step.
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