发明名称 TRANSISTOR HIGH-FREQUENCY AMPLIFIER ON COMMON-BASE CIRCUIT
摘要 FIELD: physics; radio. ^ SUBSTANCE: invention concerns radio engineering and communication area and can be used as entrance and intermediate analogue microcircuits cascades of various functional purposes (high-frequency and superhigh-frequency amplifiers, filters etc.). The high-frequency transistor amplifier on the common-base circuit contains an access transistor (1) with the emitter acting as a low-resistance amplifier input (2) connected with a source of signal (3), the collector is connected to an amplifier output (4) and a load circuit (5), and the base is connected with a high-frequency compensation circuit (6). The first (7) additional transistor, the auxiliary current amplifier (8)and the current-stabilizing two-terminal element (9) are included into the scheme; the emitter of the first additional transistor (7) is connected to the access transistor emitter (1), bases of the first (7) additional transistor and the first (1) access transistor are coupled and connected to an output of the auxiliary current amplifier (8), the collector of the first additional transistor (7) is jointed to an input of the auxiliary current amplifier (8) and the current-stabilizing two-terminal element (9). ^ EFFECT: increase of steady-state behaviour stability. ^ 6 cl, 9 dwg
申请公布号 RU2365028(C1) 申请公布日期 2009.08.20
申请号 RU20070144027 申请日期 2007.11.27
申请人 GOU VPO "JUZHNO-ROSSIJSKIJ GOSUDARSTVENNYJ UNIVERSITET EHKONOMIKI I SERVISA" (JURGUEHS) 发明人 PROKOPENKO NIKOLAJ NIKOLAEVICH;KONEV DANIIL NIKOLAEVICH;BUDJAKOV ALEKSEJ SERGEEVICH
分类号 H03F3/189 主分类号 H03F3/189
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