发明名称 |
THIN FILM TRANSISTOR COMPRISING NANOWIRES AND FABRICATION METHOD THEREOF |
摘要 |
A thin film transistor includes nanowires. More specifically, the thin film transistor includes nanowires aligned between and extending to opposite facing lateral surfaces of source/drain electrodes on a substrate. The nanowires extend in a direction parallel to a major surface defining the substrate to form a semiconductor channel layer. Also disclosed herein is a method for fabricating the thin film transistor.
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申请公布号 |
US2009206321(A1) |
申请公布日期 |
2009.08.20 |
申请号 |
US20080243407 |
申请日期 |
2008.10.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHA SEUNG NAM;SONG BYONG GWON;JANG JAE EUN |
分类号 |
H01L21/84;H01L29/06 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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