| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can form an impurity region precisely at a desired position, and to provide its fabrication process. SOLUTION: A fabrication process of a Schottky barrier diode comprises a step for forming an n-type SiC layer 10, a step for forming a trench 30 on the surface of the n-type SiC layer 10, and a step for heat treating the n-type SiC layer 10 while supplying silicon and nitrogen to the surface of the n-type SiC layer 10 after the step for forming a trench 30. COPYRIGHT: (C)2009,JPO&INPIT |
