| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for etching features in a silicon-containing anti-reflective coating (ARC) layer on a substrate, and more particularly, a method for etching features in a silicon-containing (ARC) layer while reducing a critical dimension (CD) bias. <P>SOLUTION: A method for dry development of an anti-reflective coating (ARC) layer on a substrate includes a process of providing a substrate having a multi-layer mask in a plasma processing system. A feature pattern is then formed in a lithographic layer using a lithographic process. Thereafter, the feature pattern is transferred from the lithographic layer to the silicon-containing ARC layer using a dry plasma etching process, wherein the offset in the CD bias is reduced between nested structures and isolated structures. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
