| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of calculating a value of a surface charge density unknown easily when values of an in-film charge density, a film thickness and a relative dielectric constant, of an insulating film formed on a principal plane of a semiconductor substrate are known. SOLUTION: A value of a surface charge density of an unknown physical value related to an insulating film on a substrate is determined preliminarily, a film potential operation value of the insulating film is obtained based on the preliminarily determined value of the surface charge density and three known physical values of the in-film charge density, the film thickness and the relative dielectric constant, and a surface potential operation value of the insulating film is obtained by using the film potential operation value. Thereafter, the preliminarily determined value of the surface charge density is changed until a difference between the surface potential operation value and a surface potential observation value of the insulating film measured by a surface electrometer becomes to a threshold or less, and the preliminarily determined value at the time when the difference becomes to the threshold or less is decided as a value of the surface charge density. Thereby, the surface charge density can be obtained without changing a status of the surface of the insulating film, and without providing electrodes or the like on the surface of the insulating film. COPYRIGHT: (C)2009,JPO&INPIT
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