发明名称 Semiconductor device and method for manufacturing the same
摘要 Semiconductor devices required forming a stress control film to handle different stresses on each side when optimizing the stress on the respective P channel and N channel sections. A unique feature of the semiconductor device of this invention is that P and N channel stress are respectively optimized by making use of a stress control film jointly for the P and N channels that conveys stress in different directions by utilizing the film thickness.
申请公布号 US2009206410(A1) 申请公布日期 2009.08.20
申请号 US20090320186 申请日期 2009.01.21
申请人 NEC ELECTRONICS CORPORATION 发明人 MITANI HITOSHI
分类号 H01L27/088;H01L21/28;H01L29/78 主分类号 H01L27/088
代理机构 代理人
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