发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
Semiconductor devices required forming a stress control film to handle different stresses on each side when optimizing the stress on the respective P channel and N channel sections. A unique feature of the semiconductor device of this invention is that P and N channel stress are respectively optimized by making use of a stress control film jointly for the P and N channels that conveys stress in different directions by utilizing the film thickness.
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申请公布号 |
US2009206410(A1) |
申请公布日期 |
2009.08.20 |
申请号 |
US20090320186 |
申请日期 |
2009.01.21 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
MITANI HITOSHI |
分类号 |
H01L27/088;H01L21/28;H01L29/78 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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