| 摘要 |
PROBLEM TO BE SOLVED: To further enhance an activation rate without increasing an impurity diffusion length for a material having a small thermal resistance such as SiGe or the like also in a millisecond anneal. SOLUTION: A thermal cycle that after a temperature rises at a temperature rising speed of 1.0×10<SP>7</SP>(°C/sec) from a first setting temperature T1 to a second setting temperature T2, the temperature is kept for 50 milliseconds or less at the second setting temperature T2, and thereafter, the temperature falls from the second setting temperature T2 to the first setting temperature T1 is repeated consecutively a plurality of times. COPYRIGHT: (C)2009,JPO&INPIT |
