发明名称 |
PLASMA PROCESSING APPARATUS FOR CONTROL OF BAFFLE OPENING VOLUME |
摘要 |
A plasma processing apparatus is provided to differently control a flow of a process gas according to situations by randomly controlling an aperture ratio of a baffle. A plasma processing apparatus includes a top electrode, a bottom electrode, and a baffle(50). The top electrode and the bottom electrode are prepared in a top region and a bottom region inside a chamber. The baffle is prepared between the bottom electrode and a wall inside the chamber. The baffle includes a baffle plate(60), a rotation piece(70), a rotation unit(80). The baffle plate is divided between the bottom electrode and the wall inside the chamber, and includes through holes. The rotation piece is rotatably installed in the through hole, and controls the aperture ratio of the through hole. The rotation unit rotates the rotation piece. |
申请公布号 |
KR20090088526(A) |
申请公布日期 |
2009.08.20 |
申请号 |
KR20080013855 |
申请日期 |
2008.02.15 |
申请人 |
ADP ENGINEERING CO., LTD. |
发明人 |
HA, SU CHUL;PARK, WOO JONG;SONG, HO KEUN |
分类号 |
H05H1/24 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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