LAYOUT METHOD FOR FORMING INVERTER DRIVER

摘要

A formation method of an inverter driver is provided to increase the driving force of MOS transistors by advancing the point of time of turn-on of MOS transistors. A formation method of an inverter driver comprises the formation step of PMOS transistor elements and NMOS; the formation step of the first common line(S1); the formation step of the second common line(S2); and formation step of the third common line. The formation step of NMOS and PMOS transistor elements is performed to form the NMOS and PMOS transistor elements at the active region within the N and P well regions. The first common line electrically connects gate patterns(220, 420) within the first common line with the input line of NMOS and PMOS transistor elements. The input line of the transistor elements receives the input signal. The second common line is electrically connected the first common line within the N and P-well region.