SYSTEM AND METHOD TO PREDICT CHIP IDDQ AND CONTROL LEAKAGE COMPONENTS

摘要

A method for predicting and controlling leakage wherein an IDDQ prediction macro is placed in a plurality of design topographies and data is collected using the IDDQ prediction macro. The IDDQ prediction macro is configured to measure subthreshold leakage and gate leakage for at least one device type in a semiconductor test site and in scribe lines using the IDDQ prediction macro and establish a leakage model. The method correlates the semiconductor test site measurements and the scribe line measurements to establish scribe line control limits, predicts product leakage; and sets subthreshold leakage limits and gate leakage limits for each product using the leakage model.