| 摘要 |
A method of fabricating the trench isolation layer for semiconductor device is provided to prevent moat from being formed in the device isolation film of the boundary of the active region. The pad insulation film(104) and hard mask film are formed on the semiconductor substrate(102). The hard mask film is made of the nitride film and the pad insulation film is made of the oxide film. The insulating layer for spacer is formed on the semiconductor substrate including the hard mask pattern(106a). The spacer(108a) is formed on the side wall of the hard mask pattern. The trench(110) defining the active area is formed on the device isolation region. The insulating layer(112) is formed on the semiconductor substrate including the trench. The upper dielectric layer is etched to form the device isolation film on the trench.
|
