| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which enables manufacturing of a semiconductor device having an ESD protection function with a smaller number of manufacturing steps. SOLUTION: At least two wells different in conduction types (N-well 12a and P-well 12b) are formed on a semiconductor substrate. The well includes well contact diffusion regions 13a and 13b of the same conduction type as the well, MOSFETs whose source regions 16a and 16b or drain regions 17a and 17b are connected to a power supply, and diffusion regions 14a and 14b which are of the same conduction type as the source regions 16a and 16b or the drain regions 17a and 17b and function as resistances and also function as diodes between the diffusion regions 13a and 13b. The other ends of the source regions 16a and 16b or the drain regions 17a and 17b are connected to one ends of the diffusion regions 14a and 14b, and the other ends of the diffusion regions 14a and 14b are connected to an output terminal OUT. COPYRIGHT: (C)2009,JPO&INPIT
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