SILICON SOLAR CELL

摘要

A silicon solar cell includes a silicon substrate (10) having a p-n junction structure fabricated by forming an n-type silicon substrate on a p-type silicon substrate by n-type impurity diffusion. The silicon substrate (10) contains multiple diffusing bodies (12) diffusing incident light (11) in all directions as shown by arrows (11a to 11g). Since the diffused light beams travel along the light-receiving surface (10a) at long distances, the lengths that the light beams travel are long accordingly, and the light absorption is enhanced. Even holes (pipe-like holes) formed in the light-receiving surface (10a) of the silicon substrate (10) formed after the anodization step enhance the light internal persistence rate higher than that of conventional silicon substrates like silicon substrates (10) containing air balls (12). The silicon substrate exhibiting a light internal persistence rate approximate to those of silicon substrates containing air balls can be fabricated by a simpler manufacturing method without any annealing step.