| 摘要 |
PROBLEM TO BE SOLVED: To enhance the ESD withstanding capability of a circuit portion of a semiconductor device, having a plurality of power domains, to which a signal is input while maintaining characteristics. SOLUTION: A semiconductor device 70 is provided with: a first circuit portion (transmission side) 1 supplied with a high-side power source VDDA of a first power domain; and a second circuit portion (reception side) 2 supplied with a high-side power source VDDB of a different second power supply domain. The second circuit portion (reception side) 2 is provided with an Nch MOS transistor NTa, a Pch MOS transistor PTa, and a Pch MOS transistor PTb. The Pch MOS transistor PTb connected to the high-side power source VDDB side is a normally-on transistor. An inverter comprising the Pch MOS transistor PTa and Nch MOS transistor NTa is provided between the Pch MOS transistor PTb and a low-side power source VSS, and a signal S2 output from the first circuit portion (transmission side) 1 is input thereto. COPYRIGHT: (C)2009,JPO&INPIT
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