发明名称 HIGH TEMPERATURE THIN FILM TRANSISTOR ON SODA LIME GLASS
摘要 The present invention generally comprises a low cost TFT and a method of manufacturing a TFT. For TFTs, soda lime glass would be an attractive alternative to non-alkali glass, but a soda lime glass substrate will permit sodium to diffuse into the active layer and degrade the performance of the TFT. Substrates comprising a polyimide, because they are flexible, would also be attractive to utilize instead of non-alkali glass substrates, but the plastic substrates permit carbon to diffuse into the active layer. By depositing a silicon oxynitride adhesion layer over the soda lime glass substrate and a silicon rich barrier layer over the adhesion layer, diffusion may be reduced and deposition may occur at high temperatures. Thus, a lower cost TFT may be produced with a soda lime glass substrate or a substrate comprising a polyimide as compared to a non-alkali glass substrate.
申请公布号 US2009200553(A1) 申请公布日期 2009.08.13
申请号 US20090413136 申请日期 2009.03.27
申请人 发明人 YANG YA-TANG;PARK BEOM SOO;WON TAE K.;CHOI SOO YOUNG
分类号 H01L29/786;B32B17/06;H01L21/336 主分类号 H01L29/786
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