| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode which has high withstand voltage characteristics equal to those of a GaN-based FET, and has low on-state resistance. SOLUTION: A semiconductor device 1 includes a silicon diode 3 having low withstand voltage characteristics and a GaN-based HEMT 5 having high withstand voltage characteristics and is formed of a GaN-based compound semiconductor capable of operating with low loss, wherein the source electrode of the GaN-based HEMT5 is connected to the cathode side of the silicon diode 3 and the gate electrode of the GaN-based HEMT5 is connected to the anode side of the silicon diode 3. COPYRIGHT: (C)2009,JPO&INPIT |
