| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To easily form a through-hole for forming a vertical conduction portion with respect to a semiconductor device provided with the vertical conduction portion in an insulating layer made of a prepreg material at a periphery of a semiconductor constitution body called a CSP. <P>SOLUTION: A ground layer 2 is provided on a base plate 1, and the semiconductor constitution body 3 is provided thereupon; and first and second insulating layers 15 and 18 are provided at a periphery thereof, and upper-layer wiring 22 is provided thereupon with an upper-layer insulating film 19 interposed. In this case, the first insulating layer 15 is made of the prepreg material, and the second insulating layer 18 is made of only a thermosetting resin extruded from the prepreg material. The first insulating layer has a plurality of slits 16a formed to communicate the outside thereof with the inside of an opening 16, and the second insulating layer 18 is provided in the slits 16a. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
