SEMICONDUCTOR DEVICE, SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress the occurrence of a backward leak current and uses a wide band-gap semiconductor. SOLUTION: On one principal surface of a GaN substrate 1, a GaN epitaxial layer 2 as a first nitride semiconductor is formed. On the GaN epitaxial layer, an AlN epitaxial layer 3 is formed. On the AlN epitaxial layer 3, a Schottky electrode 5 is formed. Further, an ohmic electrode 4 is formed on the principal surface of the GaN substrate 1 on the opposite side from the side where the GaN epitaxial layer 2 is formed. COPYRIGHT: (C)2009,JPO&INPIT