| 摘要 |
PROBLEM TO BE SOLVED: To provide a ZnO-based substrate having a high-quality surface suitable for crystal growth, and to provide a method for processing the ZnO-based substrate. SOLUTION: The ZnO-based substrate is configured so that the presence of carboxy group or carbonate group on the surface of a principal face, where a crystal is grown, is substantially zero. In order to make the presence of carboxy groups or carbonate groups zero, the ZnO-based substrate surface is brought into contact with one of oxygen radicals, oxygen plasma or ozone prior to starting to grow a crystal. Thereby, the ZnO-based substrate surface is made more purified, on which a ZnO-based thin film with high quality can be produced. COPYRIGHT: (C)2009,JPO&INPIT
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