| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be formed while suppressing damages to the gate electrode of a p-type transistor, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes: an n-type transistor 10 including a first source-drain region with an extension region where conductive impurities are segregated and formed on a first channel region side and a first silicide region formed in contact with a first spacer on the first source-drain region; a p-type transistor 20 including a second source-drain region with an extension region on a second channel region side and a second silicide region formed away from a second spacer on the second source-drain region; a tensile stress film 18 for giving tensile distortion in a channel direction to the first channel region; and a compression stress film 28 for giving compression distortion in the channel direction to the second channel region. COPYRIGHT: (C)2009,JPO&INPIT
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