METHOD OF MANUFACTURING FERROELECTRIC MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric capacitor, with which a low voltage operation is made possible by thinning a ferroelectric film. SOLUTION: The method of manufacturing a ferroelectric memory device includes: a step of forming a first electrode layer 12a above a substrate; a step of forming a first ferroelectric layer on the first electrode layer 12a; a step of forming an amorphous layer 16a on the first ferroelectric layer; a step of forming a second electrode layer 14a on the amorphous layer 16a; and a step of crystallizing the amorphous layer 16a and turning it to a second ferroelectric layer. COPYRIGHT: (C)2009,JPO&INPIT