Monolithisch integrierbare Schaltungsanordnung zum Überspannungsschutz

摘要

A first Zener diode (ZD1) wired in a forward direction (FD) and a first diode (D1) in an inhibiting direction (ID) are looped-in in series between connections (ALS) and a reference potential (RF). In a low-side driver stage (LS), a second diode (D2) is looped-in in an FD between an ALS and a MOSFET N-channel connection (NM) and a second Zener diode (ZD2) looped-in in an ID between the NM and RF.