| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a multijunction solar cell containing a metamorphic layer. <P>SOLUTION: Provided are the inverted metamorphic multijunction solar cell including an upper subcell, middle subcell, and lower subcell and the method for manufacturing the same, wherein a first substrate for the epitaxial growth of semiconductor material is prepared, an upper first solar subcell having a first band gap is formed on the substrate, a middle second solar subcell having a second band gap smaller than the first band gap is formed on the first solar subcell, a graded middle layer having a third band gap larger than the second band gap is formed on the second subcell, and a lower third solar subcell having a fourth band gap smaller than the second band gap is formed on the graded middle layer, and the third subcell is lattice misfit to the second subcell so as to allow at least one cell out of these solar subcells to have a hetero-junction base/emitter layer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
