| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a compound semiconductor substrate capable of reducing the amount of warpage in the substrate. <P>SOLUTION: The method of manufacturing the compound semiconductor substrate includes: a lapping process S30 for mechanically machining a compound semiconductor substrate having a main surface and a rear surface on a surface opposite to the main surface by a simultaneous double surface lapping apparatus; and a polishing process S50 for polishing the lapped compound semiconductor substrate. In the lapping process S30, the compound semiconductor substrate is mechanically machined by the simultaneous double surface lapping apparatus so that the amount of lapping in the rear surface becomes larger than that in the main surface. In the polishing process S50, the main surface of the compound semiconductor substrate is subjected to specular polishing. <P>COPYRIGHT: (C)2009,JPO&INPIT |
