发明名称 SUBSTRATE-TREATING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the rate of operation of a device by reducing maintenance time, and to suppress the occurrence of gas leakage, damage of a capturing section, or the like following the attachment/detachment of the capturing section. SOLUTION: A substrate-treating device includes: a treatment chamber for treating a substrate; a gas supply line for supplying gas for treating a substrate to the treatment chamber; a first exhaust pump 408 for exhausting the inside of the treatment chamber; a gas exhaust line 231 for allowing the first exhaust pump 408 to communicate with the treatment chamber; a capturing section 404 that is disposed in the gas exhaust line 231 and captures a product generated in the treatment chamber; and a second exhaust pump 412 that communicates with the capturing section 404 and can exhaust the inside of the capturing section 404 to pressure lower than pressure that at least the first exhaust pump 408 can exhaust. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009182024(A) 申请公布日期 2009.08.13
申请号 JP20080017672 申请日期 2008.01.29
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MORITA SHINYA;MATSUDA SATOYUKI;NAKADA TAKAYUKI
分类号 H01L21/205;C23C16/44 主分类号 H01L21/205
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