SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device with excellent characteristics which has a high-reliability element isolation region. SOLUTION: The manufacturing method of the semiconductor device includes the steps of: forming a multilayer film including a gate insulating film 102 and an electrode film 103 of a memory cell of a flash memory on a semiconductor substrate 101; processing the multilayer film by reactive ion etching to form an isolation groove for forming the element isolation region, and exposing a surface of the semiconductor substrate in the isolation groove; forming an O3-TEOS film 107 presenting base selectivity during film formation as a first buried insulating film in the isolation groove; and filling the isolation groove with a second buried insulating film 108 to form the element isolation region having an STI structure. COPYRIGHT: (C)2009,JPO&INPIT