发明名称 |
STRUCTURE AND METHOD OF FORMING TRANSITIONAL CONTACTS BETWEEN WIDE AND THIN BEOL WIRINGS |
摘要 |
A structure and method of forming a conducting via for connecting two back end of the line (BEOL) metal wiring levels is described. The method includes forming a first interconnect structure having a first dimensional width in a first dielectric layer; depositing a second dielectric layer over said first dielectric layer; etching an interconnect trench in the said second dielectric layer; etching a interconnect via using a photo resist mask to form a first portion of the transitional via; reacting the photo resist to expand the photo resist at least in the lateral direction; etching the said dielectric layer using the reacted photo resist to form the second portion of the transitional via; and filling the said interconnect trench and the said interconnect via with metal.
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申请公布号 |
US2009200674(A1) |
申请公布日期 |
2009.08.13 |
申请号 |
US20080027448 |
申请日期 |
2008.02.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG HAINING;LI WAI-KIN |
分类号 |
H01L23/522;H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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