| 摘要 |
Random number generating element comprises source region, drain region, semiconductor channel provided between source region and drain region and having portion of width W and length L, width W and length L satisfying W<=(pi/10(mum2))/L, tunnel insulation film provided on semiconductor channel, and conductive fine particle group containing conductive fine particles provided on tunnel insulation film with surface density not less than 2.5x1011 cm-2, charge and discharge of electrons generating between conductive fine particles and semiconductor channel via tunnel insulation film, wherein following inequalities are satisfied: <?in-line-formulae description="In-line Formulae" end="lead"?>LWDdot>=[RTunnel/RTunnel(Tox=0.8 nm)]0.3 nm/Txexp[0.3 nmx(0.8 nm/T)x(4pi(2mx3.1 eV)1/2/h)],<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>(q/4pi∈T)<=26meV,<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>[Ddotxd4/3/(WxL1/2)]x[RTunnel/RTunnel(Tox=0.8 nm)]-2/3>=8000x21/2(mum-13/6)<?in-line-formulae description="In-line Formulae" end="tail"?> where Ddot represents surface density, d average diameter, T thickness, Rtunnel tunnel resistance per unit area, Rtunnel (Tox=0.8 nm) tunnel resistance, per unit area, of tunnel oxide film with thickness of 0.8 nm, h Plank's constant, q elemental charge, m effective mass, and ∈ dielectric constant.
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